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Lee, K. K.; Oshima, Takeshi; Saint, A.*; Kamiya, Tomihiro; Jamieson, D. N.*; Ito, Hisayoshi
Nuclear Instruments and Methods in Physics Research B, 210, p.489 - 494, 2003/09
Times Cited Count：21 Percentile：78.43(Instruments & Instrumentation)To obtain the information on radiation damage of 6H-SiC devices, ion beam induced charge collection (IBICC) for 6H-SiC schottky diodes irradiated with proton, alpha and carbon micro beam 10
to 10
ions/cm
was studied. No significant difference of degradation was observed between p- and n-substrates irradiated with 2MeV-alpha micro beam. The decrease in IBCC shows a good agreement with the calculation using non ionizing energy loss (NIEL). As a result of ion luminescence and ultra violet photo luminescence, the level of 2.32 eV was observed.
Nishijima, Toshiji*; Hearne, S. M.*; Jamieson, D. N.*; Oshima, Takeshi; Lee, K. K.; Ito, Hisayoshi
Nuclear Instruments and Methods in Physics Research B, 210, p.196 - 200, 2003/09
Times Cited Count：1 Percentile：12.48(Instruments & Instrumentation)The radiation damage in silicon carbide (SiC) schottky diode was studied using ion beam induced current (IBIC). Schottky diodes with electrodes of 30 
m on n- or p-type 6H-SiC were fabricated using the evaporation of Al, Ni, and Au. To study the radiation damage of diodes, the 2MeV-He ion micro beam with a diameter of 1 m was irradiated from 10
to 10/cm into a 10 m 
10 m area. As the result, the value of IBIC decreased with increasing the dose of 2 MeV-He. This indicates that the charge collection decreases by the recombination centers introduced by irradiation.
Nishijima, Toshiji*; Oshima, Takeshi; Lee, K. K.
Nuclear Instruments and Methods in Physics Research B, 190(1-4), p.329 - 334, 2002/05
Times Cited Count：11 Percentile：58.04(Instruments & Instrumentation)no abstracts in English
